One-Electron Spectral Weight of Doped Mott Insulators Gauge Field Theory Approach

نویسنده

  • H. C. Lee
چکیده

In this note we study the electron spectral weight of doped Mott insulators based on the 2D slave boson gauge field theory. The vertex correction with static gauge field is calculated in the second order perturbation theory. The vertex correction is found to be singular at low energy and requires nonperturbative treatments. PACS numbers: 74.20.Mn, 74.25.-q, Typeset using REVTEX 1

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hidden charge 2e Boson in doped Mott insulators.

We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e e...

متن کامل

Theory of the Luttinger surface in doped Mott insulators

We prove that the Mott insulating state is characterized by a divergence of the electron self-energy at well-defined values of momenta in the first Brillouin zone. When particle-hole symmetry is present, the divergence obtains at the momenta of the Fermi surface for the corresponding noninteracting system. Such a divergence gives rise to a surface of zeros the Luttinger surface of the single-pa...

متن کامل

Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an org...

متن کامل

عدم تقارن الکترون-حفره در کوپراتهای دمای بالا از دید نظری

  Asymmetric features of various physical quantities in the normal and superconducting states between hole- and electron-doped cuprate high-temperature superconductors have been an issue of debate for a long time. Their exploration is very important for the understanding not only of the mechanism of high-Tc superconductivity but also of the nature of doped-Mott insulators. Presented in this rev...

متن کامل

0 a New Approach to Doped Mott Insulators

We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard weak–coupling perturbation methods fail. A rotationally invariant Stratonovich–Hubbard field is introduced to decouple the static spin components of the int...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1996